CHARACTERIZATION OF NITROGENATED GALLIUM PHOSPHIDE FILMS

Abstract

GaPN thin films were deposited on Silicon (100) substrates, in the range of 420-520 oC by r-f magnetron sputtering employing a nitrogen–argon atmosphere. According to X-ray measurements the GaPN films are polycrystalline with preferential orientation along of (111) direction. High resolution scanning electron microscopy (HRSEM) images taken in cross sectional show a columnar growth. Raman spectra show TO and LO vibrational phonon modes at 370 and 408 cm-1 associated to GaP, and a local phonon mode around 390 cm-1, likely related with N-induced disorder or N-cluster formation in GaP host.

Keywords

• Pulverización catódica
• GaPN
• Raman
• SEM.