Scalable high performance radio frequency electronics based on large domain bilayer MoS2

Qingguo Gao; Zhenfeng Zhang; Xiaole Xu; Jian Song; Xuefei Li; Yanqing Wu

doi:10.1038/s41467-018-07135-8

Nature Communications (Nov 2018)

Scalable high performance radio frequency electronics based on large domain bilayer MoS2

Qingguo Gao,
Zhenfeng Zhang,
Xiaole Xu,
Jian Song,
Xuefei Li,
Yanqing Wu

Affiliations

Qingguo Gao: Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology
Zhenfeng Zhang: Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology
Xiaole Xu: Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology
Jian Song: Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology
Xuefei Li: Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology
Yanqing Wu: Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology

DOI: https://doi.org/10.1038/s41467-018-07135-8
Journal volume & issue: Vol. 9, no. 1
pp. 1 – 8

Abstract

Read online

Large area two-dimensional materials show promise for applications in DC and RF flexible electronics. Here, the authors report RF transistors based on chemical vapor deposited bilayer MoS2 with 23 GHz extrinsic maximum oscillation frequency, and gigahertz mixers on flexible polyimide substrates.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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