The study of radiation damage of EPROM 2764 memory

Abstract

A simple statistical theory of radiation damage of semiconductor memory has been constructed. The radiation damage of EPROM memory has been investigated. The measured number of damaged bytes is significantly lower than the expected number resulting from the purely random distribution of the damaged bits. In this way it has been proven that there is a correlation between the failures of individual memory bits which are located in the same byte.

Keywords

• radiation damage
• EPROM
• non-volatile memory