Efficiency Comparison of Si Igbt and Sic Mosfet Based Three-Phase Inverters

Abstract

This article deals the implementation of a SiC MOSFETs in a three-phase inverter module, intended for use in auxiliary converters for powering electrical appliances of railway wagons. The basic properties of the SiC semiconductor elements and their differences, compared to IGBT modules, are summarized here. The given block diagram describes the individual blocks of the inverter module and their interconnection. Finally, a measuring setup for measuring the efficiency of inverters is presented. The measured efficiency values of the proposed SiC inverter and the original solution with IGBT modules are compared in the given graphs.

Keywords

• wide band gap
• converter
• silicon carbide
• inverter
• efficiency