UV-Vis optoelectronic properties of α-SnWO4: A comparative experimental and density functional theory based study
Ahmed Ziani,
Moussab Harb,
Dalal Noureldine,
Kazuhiro Takanabe
Affiliations
Ahmed Ziani
Division of Physical Sciences and Engineering, KAUST Catalysis Center (KCC), King Abdullah University of Science and Technology (KAUST), Thuwal, Makkah 23955-6900, Saudi Arabia
Moussab Harb
Division of Physical Sciences and Engineering, KAUST Catalysis Center (KCC), King Abdullah University of Science and Technology (KAUST), Thuwal, Makkah 23955-6900, Saudi Arabia
Dalal Noureldine
Division of Physical Sciences and Engineering, KAUST Catalysis Center (KCC), King Abdullah University of Science and Technology (KAUST), Thuwal, Makkah 23955-6900, Saudi Arabia
Kazuhiro Takanabe
Division of Physical Sciences and Engineering, KAUST Catalysis Center (KCC), King Abdullah University of Science and Technology (KAUST), Thuwal, Makkah 23955-6900, Saudi Arabia
We report a combined experimental and theoretical study on the optoelectronic properties of α-SnWO4 for UV-Vis excitation. The experimentally measured values for thin films were systematically compared with high-accuracy density functional theory and density functional perturbation theory using the HSE06 functional. The α-SnWO4 material shows an indirect bandgap of 1.52 eV with high absorption coefficient in the visible-light range (>2 × 105 cm−1). The results show relatively high dielectric constant (>30) and weak diffusion properties (large effective masses) of excited carriers.
