The load network of the carrier amplifier for the conventional Doherty power amplifier (DPA) consists of an impedance matching circuit, an offset line, and a $\lambda $ /4 transmission line (TL), so that the overall electrical length of the network can easily exceed the minimum value of 90°. Then for appropriate impedance modulation, it should be 270° with an additional 180°. This excessive electrical length of the load matching network limits the bandwidth at either the low-power or peak-power level. In this paper, a compact quasi-lumped $\lambda $ /4 impedance transformer (ITF) having simultaneous multiple functions of impedance matching and load impedance modulation with a controlled electrical length of 90° is presented. The proposed load network includes the internal components of the transistor, the simplest high-pass network using a shunt inductor, and a low-pass L-C network. Using the optimized value of the shunt inductor, the electrical length of the load network can be adjusted to 90°, while other components are accordingly changed to match the optimum load impedance. To verify the proposed load network, a DPA was designed and implemented using 10 W GaN-HEMTs for both carrier and peaking amplifiers. Using a 5G New Radio (NR) signal with signal bandwidth of 100 MHz and peak-to-average power ratio (PAPR) of 7.8 dB, a drain efficiency (DE) of 47 - 54.2%, and adjacent channel leakage power ratio (ACLR) of −27.9 - −23 dBc were achieved at an average output power level of 35.8 - 36.3 dBm for the frequency band of 3.4 - 3.8 GHz.
