The influence of the epitaxial layers surface morphology and polarity on quality of passivating coating and the parameters of arrays photosensitive devices on base Cd_хHg_1-хTe

Abstract

The influence of growth surface defects of CdхHg1-хTe epitaxial layers which has been grown by liquid phase epitaxy on quality of passivating coatings, creating by the method of the hot wall, is investigated. The reason of negative action nonplanarity and а surface defects of CdхHg1-хTe epitaxial layers on the technological process of the manufacture of photodiodes is established. The influence of crystallographic polarity of CdхHg1-хTe epitaxial layers on velocity of the CdTe coating precipitation and surface morphology is discussed

Keywords

• epitaxial layer cd</i>_<i>х</i><i>hg</i>_<i>1-х</i><i>тe</i>
• <i>passivating coating, photodiode, arrays photosensitive divice, growth surface defect, nonplanarity, crystallographic polarity