EPJ Web of Conferences (Jan 2013)

Hall current sensor IC with integrated Co-based alloy thin film magnetic concentrator

  • Albertini F.,
  • Ranzieri P.,
  • Casoli F.,
  • Toia F.,
  • Iuliano P.,
  • Paci D.,
  • Chiesi V.,
  • Marchesi M.,
  • Palumbo V.,
  • Morelli M.

DOI
https://doi.org/10.1051/epjconf/20134016002
Journal volume & issue
Vol. 40
p. 16002

Abstract

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This work deals with a cobalt-based alloy thin film magnetic concentrator (MC) which is fully integrated on a Hall sensor integrated circuit (IC) developed in the 0.35 µm Bipolar CMOS DMOS (BCD) technology on 8” silicon wafer. An amorphous magnetic film with a thickness of 1µm, coercitive field Hc<10A/m and saturation magnetization (µ0MS) of 0.45T has been obtained with a sputtering process. The Hall sensor IC has shown sensitivity to magnetic field at room temperature of 240V/AT without concentrator and 2550V/AT with concentrator, gaining a factor of 10.5. A current sensor demonstrator has been realized showing linear response in the range -50 to 50A.