Enhancing the Uniformity of a Memristor Using a Bilayer Dielectric Structure
Yulin Liu,
Qilai Chen,
Yanbo Guo,
Bingjie Guo,
Gang Liu,
Yanchao Liu,
Lei He,
Yutong Li,
Jingyan He,
Minghua Tang
Affiliations
Yulin Liu
School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
Qilai Chen
Aerospace Science & Industry Shenzhen (Group) Co., Ltd., Shenzhen 518000, China
Yanbo Guo
Department of Micro and Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200241, China
Bingjie Guo
Department of Micro and Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200241, China
Gang Liu
Department of Micro and Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200241, China
Yanchao Liu
Shi Changxu Class of the School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
Lei He
Shi Changxu Class of the School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
Yutong Li
Shi Changxu Class of the School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
Jingyan He
Shi Changxu Class of the School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
Minghua Tang
School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
Resistive random access memory (RRAM) holds great promise for in-memory computing, which is considered the most promising strategy for solving the von Neumann bottleneck. However, there are still significant problems in its application due to the non-uniform performance of RRAM devices. In this work, a bilayer dielectric layer memristor was designed based on the difference in the Gibbs free energy of the oxide. We fabricated Au/Ta2O5/HfO2/Ta/Pt (S3) devices with excellent uniformity. Compared with Au/HfO2/Pt (S1) and Au/Ta2O5/Pt (S2) devices, the S3 device has a low reset voltage fluctuation of 2.44%, and the resistive coefficients of variation are 13.12% and 3.84% in HRS and LRS, respectively, over 200 cycles. Otherwise, the bilayer device has better linearity and more conductance states in multi-state regulation. At the same time, we analyze the physical mechanism of the bilayer device and provide a physical model of ion migration. This work provides a new idea for designing and fabricating resistive devices with stable performance.
