Reliability Assessment for Trust Integrated Circuit Al Interconnections at Elevated Temperatures

Abstract

The process of recrystallization occurring at temperature of +80°C in aluminum (Al) conductors of integrated circuits (IC) designed to operate in the range -40°C -+60°C has been studied experimentally by the method of cross sections obtained with a focused ion beam (FIB). Using the data of a comparative analysis of IC used in various operating conditions, the mechanism of electromigration caused by the supply of operating voltage to IC under the influence of elevated temperature was revealed. Defects, caused by the electromigration of the substance, which appeared as a result of recrystallization processes in the Al conductors of the IC, were investigated. The cause was determined and technological solutions were proposed to improve the reliability of Al conductors at elevated temperatures under conditions when it is impossible to change the technological process of the IC production. The obtained results can be used for the development of IC as well as in the educational programs related to the microelectronics and materials sciences.

Keywords

• integrated circuit, interconnector, temperature, recrystallization, electromigration, temperature, diffusion, reliability.