Modeling and Simulation of Tin Sulfide (SnS)-Based Solar Cell Using ZnO as Transparent Conductive Oxide (TCO) and NiO as Hole Transport Layer (HTL)
Ahmad Umar,
Pooja Tiwari,
Sadanand,
Vaibhava Srivastava,
Pooja Lohia,
Dilip Kumar Dwivedi,
Hussam Qasem,
Sheikh Akbar,
Hassan Algadi,
Sotirios Baskoutas
Affiliations
Ahmad Umar
Department of Chemistry, College of Science and Arts, Promising Centre for Sensors and Electronic Devices (PCSED), Najran University, Najran 11001, Saudi Arabia
Pooja Tiwari
Department of Electronics and Communication Engineering, Madan Mohan Malviya University of Technology, Gorakhpur 273010, India
Sadanand
Department of Applied Sciences, Galgotias College of Engineering and Technology, Greater Noida 201306, India
Vaibhava Srivastava
Department of Electronics and Communication Engineering, Madan Mohan Malviya University of Technology, Gorakhpur 273010, India
Pooja Lohia
Department of Electronics and Communication Engineering, Madan Mohan Malviya University of Technology, Gorakhpur 273010, India
Dilip Kumar Dwivedi
Photonics and Photovoltaic Research Lab, Department of Physics and Material Science, Madan Mohan Malviya University of Technology, Gorakhpur 273010, India
Hussam Qasem
National Centre for Renewable Energy, King Abdulaziz City for Science and Technology (KACST), Riyadh 11442, Saudi Arabia
Sheikh Akbar
Department of Electrical Engineering, College of Engineering, Najran University, Najran 11001, Saudi Arabia
Hassan Algadi
Department of Electrical Engineering, College of Engineering, Najran University, Najran 11001, Saudi Arabia
Sotirios Baskoutas
Department of Materials Science, University of Patras, 26500 Patras, Greece
This paper describes the simulation by Solar Cell Capacitance Simulator-1D (SCAPS-1D) software of ZnO/CdS/SnS/NiO/Au solar cells, in which zinc oxide (ZnO) is used as transparent conductive oxide (TCO) and nickel oxide (NiO) is used as a hole transport layer (HTL). The effects of absorber layer (SnS) thickness, carrier concentration, SnS defect density, NiO HTL, ZnO TCO, electron affinity and work function on cell performance have been evaluated. The effect of interface defect density of SnS/CdS on the performance of the heterojunction solar cell is also analysed. As the results indicate, a maximum power conversion efficiency of 26.92% was obtained.
