Advances in near-infrared avalanche diode single-photon detectors
Chen Liu,
Hai-Feng Ye,
Yan-Li Shi
Affiliations
Chen Liu
School of Physics and Astronomy, Yunnan University, Kunming 650091, China; Key Lab of Quantum Information of Yunnan Province, Yunnan University, Kunming, Yunnan 650091, China
Hai-Feng Ye
School of Physics and Astronomy, Yunnan University, Kunming 650091, China; Key Lab of Quantum Information of Yunnan Province, Yunnan University, Kunming, Yunnan 650091, China
Yan-Li Shi
School of Physics and Astronomy, Yunnan University, Kunming 650091, China; Key Lab of Quantum Information of Yunnan Province, Yunnan University, Kunming, Yunnan 650091, China; Corresponding author at: Yunnan University, School of Physics and Astronomy, Kunming 650091, China.
Avalanche-photodiode-based near-infrared single-photon detectors have seen rapid development in the last two decades because of their enormous internal gain, high sensitivity, fast response, small volume, and ease of integration. The InGaAs/InP near-infrared single-photon detector is the most widely used avalanche diode at present. Its device performance is still being continuously improved through the optimization of device structure and external quenching circuits. This paper analyzes the latest development and application of these InGaAs/InP photodiodes, then briefly reviews other near-infrared single-photon detection technologies based on new materials and new mechanisms.
