Electric properties of the interface quantum dot - matrix

Abstract

A theoretical research is presented concerning the potential distribution and electric field intensity in the InAs/GaAs nanoheterosystem with InAs QDs within the framework of self-consistent electron-deformation model. It is shown that at the strained border between a quantum dot and matrix there is a double electric layer, that is n+-n junction.

Keywords

• quantum dots
• electron-deformation and electrostatic potentials