Preparation of ZnTe thin films using chemical bath deposition technique

Abstract

Chemical bath deposition was used to prepare thin films of ZnTe. The density of compounds (0.5–2) ml in 50 ml of distilled water, the precipitation time (10–80 min), and the solution temperature during the precipitation process (15–85 °C) have been changed during the preparation of the ZnTe thin films to get the optimal deposition conditions of a semiconductor. The effect of these parameters has been determined by studying the optical properties of the films which included the transmittance and absorbance as a function of the wavelength and energy gap. The energy gap remains constant at about 2.7 eV over all precipitation times for each density of compound. We have also found that the energy gap of the films decreases with increasing solution temperature, reaching approximately 2.9-3eV at 15 °C and decreasing to 2.4 eV at 85 °C.

Keywords

• znte
• thin film
• semiconductor and chemical bath deposition