Elucidating the hysteresis effect in printed flexible perovskite solar cells with SnO2 quantum dot- and PCBM-based electron transport layers
Yerassyl Yerlanuly,
Erik O. Shalenov,
Hryhorii P. Parkhomenko,
Muhammad Salman Kiani,
Zarina Kukhayeva,
Annie Ng,
Askhat N. Jumabekov
Affiliations
Yerassyl Yerlanuly
Department of Physics, School of Sciences and Humanities, Nazarbayev University, 010000, Astana, Kazakhstan
Erik O. Shalenov
Department of Physics, School of Sciences and Humanities, Nazarbayev University, 010000, Astana, Kazakhstan; Department of General Physics, Satbayev University, Almaty, 050013, Kazakhstan
Hryhorii P. Parkhomenko
Department of Physics, School of Sciences and Humanities, Nazarbayev University, 010000, Astana, Kazakhstan
Muhammad Salman Kiani
Department of Physics, School of Sciences and Humanities, Nazarbayev University, 010000, Astana, Kazakhstan
Zarina Kukhayeva
Department of Physics, School of Sciences and Humanities, Nazarbayev University, 010000, Astana, Kazakhstan; Department of Intelligent System and Cybersecurity, Astana IT university, 010000, Astana, Kazakhstan
Annie Ng
Department of Electrical and Computer Engineering, School of Engineering and Digital Sciences, Nazarbayev University, 010000, Astana, Kazakhstan
Askhat N. Jumabekov
Department of Physics, School of Sciences and Humanities, Nazarbayev University, 010000, Astana, Kazakhstan; Corresponding author.
Recently, flexible perovskite solar cells (FPSCs) fabricated using solution-processed printing techniques have garnered significant attention. However, challenges remain in achieving cost-effective, scalable manufacturing under ambient conditions and ensuring stable, efficient devices. This study focuses on fabricating printed FPSCs using the slot-die coating technique and examines the impact of SnO2 quantum dot (QD) and (6,6)-Phenyl C61 butyric acid methyl ester (PCBM) based electron transport layers (ETLs) on device performance and hysteresis. Experimentally results show that SnO2 QD-based devices exhibited favorable photovoltaic properties but significant hysteresis compared to PCBM-based devices. Numerical simulations have shown that the hysteresis effect in devices is influenced not only by the higher concentration of mobile ions in the perovskite layer of PCBM-based devices compared to SnO2 QD-based devices, but also by the more effective redistribution of these ions during forward and reverse J-V scans. The results provide insights into the behavior of printed FPSCs with different ETLs, contributing to the development of high-performance, hysteresis-free printed FPSCs.
