Crystallinity Effect on Electrical Properties of PEALD–HfO<sub>2</sub> Thin Films Prepared by Different Substrate Temperatures
Xiao-Ying Zhang,
Jing Han,
Duan-Chen Peng,
Yu-Jiao Ruan,
Wan-Yu Wu,
Dong-Sing Wuu,
Chien-Jung Huang,
Shui-Yang Lien,
Wen-Zhang Zhu
Affiliations
Xiao-Ying Zhang
Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Jing Han
Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Duan-Chen Peng
Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Yu-Jiao Ruan
National Measurement and Testing Center for Flat Panel Display Industry, Xiamen Institute of Measurement and Testing, Xiamen 361024, China
Wan-Yu Wu
Department of Materials Science and Engineering, National United University, Miaoli 36063, Taiwan
Dong-Sing Wuu
Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou 54561, Taiwan
Chien-Jung Huang
Department of Applied Physics, National University of Kaohsiung, Kaohsiung University Rd., Kaohsiung 81148, Taiwan
Shui-Yang Lien
Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Wen-Zhang Zhu
Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Hafnium oxide (HfO2) thin film has remarkable physical and chemical properties, which makes it useful for a variety of applications. In this work, HfO2 films were prepared on silicon through plasma enhanced atomic layer deposition (PEALD) at various substrate temperatures. The growth per cycle, structural, morphology and crystalline properties of HfO2 films were measured by spectroscopic ellipsometer, grazing-incidence X-ray diffraction (GIXRD), X-ray reflectivity (XRR), field-emission scanning electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy. The substrate temperature dependent electrical properties of PEALD–HfO2 films were obtained by capacitance–voltage and current–voltage measurements. GIXRD patterns and XRR investigations show that increasing the substrate temperature improved the crystallinity and density of HfO2 films. The crystallinity of HfO2 films has a major effect on electrical properties of the films. HfO2 thin film deposited at 300 °C possesses the highest dielectric constant and breakdown electric field.
