Self-Heating-Based channel thermal noise of advanced Sub-5-nm-Node nanosheet FET

Abstract

In this paper, the self-heating effect and channel thermal noise (Sid) in stacked nanosheet gate-all-around (GAA) field effect transistor (FET) are investigated and discussed. In order to calculate channel thermal noise in radio-frequency (RF) operation, various factors such as electron mobility, temperature, and the gate capacitance is extracted through simulation. In addition, the channel length modulation (CLM) effect is analyzed to estimate the gate length, which is one of the important factors in obtaining Sid. After that, Sid is calculated, depending on the channel width (Tw) of the nanosheet FET. Then, the dependency of the signal to noise ratio (SNR) on Tw is addressed. Based on the findings of this work, relevant guidelines on Tw specification are discussed in terms of both Sid and SNR.

Keywords

• Nanosheet FET
• Radio frequency (RF)
• Self-heating effect (SHE)
• Signal-to-noise ratio (SNR)
• Temperature
• Thermal noise (Sid)