THREE-DIMENSIONAL MAGNETOMETER BASED ON HALL SENSORS INTEGRATED IN STANDARD CMOS TECHNOLOGY

Abstract

The results of the device simulation of a three-dimensional magnetometer based on Hall sensors integrated in a standard CMOS technology are presented. The Hall voltage vs magnetic field, Hall voltage vs magnetic field deviation angle, and sensitivity vs temperature curves were measured. The first-principles simulation of chalcogenide spinel CuCr2Se4 used in creation of a magnetic field concentrator was performed.

Keywords

• magnetic resonance imaging
• a hall sensor
• computer simulation
• hub of the magnetic field