JPhys Materials (Jan 2023)
Contact engineering for organic CMOS circuits
- Quanhua Chen,
- Jiarong Cao,
- Yuan Liu,
- Rujun Zhu,
- Jinxiu Cao,
- Zhao Liu,
- Xing Zhao,
- Jianfei Wu,
- Guangan Yang,
- Li Zhu,
- Jie Wu,
- Zhihao Yu,
- Huabin Sun,
- Run Li,
- Shujian Xue,
- Binhong Li,
- Chee Leong Tan,
- Yong Xu
Affiliations
- Quanhua Chen
- ORCiD
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications , Nanjing 210023, People’s Republic of China
- Jiarong Cao
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications , Nanjing 210023, People’s Republic of China
- Yuan Liu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications , Nanjing 210023, People’s Republic of China
- Rujun Zhu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications , Nanjing 210023, People’s Republic of China
- Jinxiu Cao
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications , Nanjing 210023, People’s Republic of China
- Zhao Liu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications , Nanjing 210023, People’s Republic of China
- Xing Zhao
- Institute of Microelectronics of the Chinese Academy of Sciences , Beijing 100029, People’s Republic of China
- Jianfei Wu
- College of Electronic Science and Technology, National University of Defense Technology , Changsha 410073, People’s Republic of China
- Guangan Yang
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications , Nanjing 210023, People’s Republic of China
- Li Zhu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications , Nanjing 210023, People’s Republic of China
- Jie Wu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications , Nanjing 210023, People’s Republic of China
- Zhihao Yu
- ORCiD
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications , Nanjing 210023, People’s Republic of China; Guangdong Greater Bay Area Institute of Integrated Circuit and System , Guangzhou 510535, People’s Republic of China
- Huabin Sun
- ORCiD
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications , Nanjing 210023, People’s Republic of China; Guangdong Greater Bay Area Institute of Integrated Circuit and System , Guangzhou 510535, People’s Republic of China
- Run Li
- Guangdong Greater Bay Area Institute of Integrated Circuit and System , Guangzhou 510535, People’s Republic of China
- Shujian Xue
- Guangdong Greater Bay Area Institute of Integrated Circuit and System , Guangzhou 510535, People’s Republic of China
- Binhong Li
- Institute of Microelectronics of the Chinese Academy of Sciences , Beijing 100029, People’s Republic of China; Guangdong Greater Bay Area Institute of Integrated Circuit and System , Guangzhou 510535, People’s Republic of China
- Chee Leong Tan
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications , Nanjing 210023, People’s Republic of China; Guangdong Greater Bay Area Institute of Integrated Circuit and System , Guangzhou 510535, People’s Republic of China
- Yong Xu
- ORCiD
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications , Nanjing 210023, People’s Republic of China; Guangdong Greater Bay Area Institute of Integrated Circuit and System , Guangzhou 510535, People’s Republic of China
- DOI
- https://doi.org/10.1088/2515-7639/ad097e
- Journal volume & issue
-
Vol. 7,
no. 1
p. 012002
Abstract
Organic field-effect transistors (OFETs) have been widely studied, but there are still challenges to achieving large-scale integration in organic complementary metal–oxide–semiconductor (CMOS) circuits. In this article, we discuss the issues on organic CMOS circuits from a device perspective. Our discussion begins with a systematic analysis of the principal parameters of the building block, a CMOS inverter, including gain, noise margin, and power dissipation, as well as the relevant challenges and the potential solutions. We then review state-of-the-art organic CMOS inverters and their fabrications. Finally, we focus on the approaches to optimize organic CMOS circuits from a specific point of view of the contact engineering, particularly for N-type OFETs.
Keywords
