Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy

Antonio B. Mei; Sahar Saremi; Ludi Miao; Matthew Barone; Yongjian Tang; Cyrus Zeledon; Jürgen Schubert; Daniel C. Ralph; Lane W. Martin; Darrell G. Schlom

doi:10.1063/1.5125809

APL Materials (Nov 2019)

Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy

Antonio B. Mei,
Sahar Saremi,
Ludi Miao,
Matthew Barone,
Yongjian Tang,
Cyrus Zeledon,
Jürgen Schubert,
Daniel C. Ralph,
Lane W. Martin,
Darrell G. Schlom

Affiliations

Antonio B. Mei: Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Sahar Saremi: Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720, USA
Ludi Miao: Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
Matthew Barone: Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Yongjian Tang: Physics Department, Cornell University, Ithaca, New York 14853, USA
Cyrus Zeledon: Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Jürgen Schubert: Peter Grünberg Institute (PGI-9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
Daniel C. Ralph: Physics Department, Cornell University, Ithaca, New York 14853, USA
Lane W. Martin: Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720, USA
Darrell G. Schlom: Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA

DOI: https://doi.org/10.1063/1.5125809
Journal volume & issue: Vol. 7, no. 11
pp. 111101 – 111101-6

Abstract

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We systematically investigate the role of defects, introduced by varying synthesis conditions and by carrying out ion irradiation treatments, on the structural and ferroelectric properties of commensurately strained bismuth ferrite BixFe2−xO3 layers grown on SrRuO3-coated DyScO3(110)o substrates using adsorption-controlled ozone molecular-beam epitaxy. Our findings highlight ion irradiation as an effective approach for reducing through-layer electrical leakage, a necessary condition for the development of reliable ferroelectrics-based electronics.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

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