Reversible metallization and carrier transport behavior of In2S3 under high pressure
Yuqiang Li,
Yang Gao,
Ningru Xiao,
Pingfan Ning,
Liyuan Yu,
Jianxin Zhang,
Pingjuan Niu,
Yanzhang Ma,
Chunxiao Gao
Affiliations
Yuqiang Li
Tianjin Key Laboratory of Advanced Electrical Engineering and Energy Technology, School of Electrical Engineering and Automation, Tianjin Polytechnic University, Tianjin 300387, People’s Republic of China
Yang Gao
State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, People’s Republic of China
Ningru Xiao
School of Science, Tianjin Polytechnic University, Tianjin 300387, People’s Republic of China
Pingfan Ning
Tianjin Key Laboratory of Advanced Electrical Engineering and Energy Technology, School of Electrical Engineering and Automation, Tianjin Polytechnic University, Tianjin 300387, People’s Republic of China
Liyuan Yu
Tianjin Key Laboratory of Advanced Electrical Engineering and Energy Technology, School of Electrical Engineering and Automation, Tianjin Polytechnic University, Tianjin 300387, People’s Republic of China
Jianxin Zhang
Tianjin Key Laboratory of Advanced Electrical Engineering and Energy Technology, School of Electrical Engineering and Automation, Tianjin Polytechnic University, Tianjin 300387, People’s Republic of China
Pingjuan Niu
Tianjin Key Laboratory of Advanced Electrical Engineering and Energy Technology, School of Electrical Engineering and Automation, Tianjin Polytechnic University, Tianjin 300387, People’s Republic of China
Yanzhang Ma
Department of Mechanical Engineering, Texas Tech University, Lubbock, Texas 79409, United States of America
Chunxiao Gao
State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, People’s Republic of China
The electrical transport properties of indium trisulfide (In2S3) under high pressure were investigated using the in situ Hall-effect and temperature dependent resistivity measurements. Resistivity, Hall coefficient, carrier concentration, and mobility were obtained at pressures up to 41.6 GPa. Pressure induced metallization of In2S3 occurred at approximately 6.8 GPa. This was determined by measuring temperature dependent resistivity. The metallization transition was also determined from compression electrical parameters, and the decompression electrical parameters indicated that the metallization was a reversible transition. The main cause of the sharp decline in resistivity was the increase in carrier concentration at 6.8 GPa. Superconductivity was not observed at the pressures (up to 32.5 GPa) and temperatures (100–300 K) used in the experiment.
