A Photoelectric-Stimulated MoS2 Transistor for Neuromorphic Engineering
Shuiyuan Wang,
Xiang Hou,
Lan Liu,
Jingyu Li,
Yuwei Shan,
Shiwei Wu,
David Wei Zhang,
Peng Zhou
Affiliations
Shuiyuan Wang
ASIC & System State Key Lab., School of Microelectronics, Fudan University, Shanghai 200433, China
Xiang Hou
ASIC & System State Key Lab., School of Microelectronics, Fudan University, Shanghai 200433, China
Lan Liu
ASIC & System State Key Lab., School of Microelectronics, Fudan University, Shanghai 200433, China
Jingyu Li
ASIC & System State Key Lab., School of Microelectronics, Fudan University, Shanghai 200433, China
Yuwei Shan
Department of Physics, State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
Shiwei Wu
Department of Physics, State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
David Wei Zhang
ASIC & System State Key Lab., School of Microelectronics, Fudan University, Shanghai 200433, China
Peng Zhou
ASIC & System State Key Lab., School of Microelectronics, Fudan University, Shanghai 200433, China
The von Neumann bottleneck has spawned the rapid expansion of neuromorphic engineering and brain-like networks. Synapses serve as bridges for information transmission and connection in the biological nervous system. The direct implementation of neural networks may depend on novel materials and devices that mimic natural neuronal and synaptic behavior. By exploiting the interfacial effects between MoS2 and AlOx, we demonstrate that an h-BN-encapsulated MoS2 artificial synapse transistor can mimic the basic synaptic behaviors, including EPSC, PPF, LTP, and LTD. Efficient optoelectronic spikes enable simulation of synaptic gain, frequency, and weight plasticity. The Pavlov classical conditioning experiment was successfully simulated by electrical tuning, showing associated learning behavior. In addition, h-BN encapsulation effectively improves the environmental time stability of our devices. Our h-BN-encapsulated MoS2 artificial synapse provides a new paradigm for hardware implementation of neuromorphic engineering.
