Research progress of millimeter wave CMOS RF power amplifier for 5G applications

Peng Lin; Zhang Guohao

doi:10.16157/j.issn.0258-7998.182835

Dianzi Jishu Yingyong (Mar 2019)

Research progress of millimeter wave CMOS RF power amplifier for 5G applications

Peng Lin,
Zhang Guohao

Affiliations

Peng Lin: School of Information Engineering，Guangdong University of Technology，Guangzhou 510006，China
Zhang Guohao: School of Information Engineering，Guangdong University of Technology，Guangzhou 510006，China

DOI: https://doi.org/10.16157/j.issn.0258-7998.182835
Journal volume & issue: Vol. 45, no. 3
pp. 1 – 6

Abstract

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In order to meet the surging demand of mobile data traffic in the future, 5G communication system will adopt a more complex non-constant envelope modulation method, resulting in high peak-to-average power ratio(PAPR) of the transmitted signal, thus putting forward more stringent requirements on the performance of millimeter-wave radio frequency power amplifier(RFPA). The CMOS process combines the advantages of low cost and high integration, making it ideal for fully integrating 5G RF modules. This paper introduces and compares various techniques for improving the efficiency and linearity of power amplifiers(PAs), mainly expounds the research status of envelope tracking(ET) technology, and finally analyzes the development trend of power amplifiers in 5G applications.

Published in Dianzi Jishu Yingyong

ISSN: 0258-7998 (Print)
Publisher: National Computer System Engineering Research Institute of China
Country of publisher: China
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
Website: http://journal.chinaaet.com/en

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