Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments

Abstract

Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.

Keywords

• magnetic field treatments
• photoluminescence
• dislocation impurity complex
• random variable
• cyclotron frequency
• electromagnetic radiation