Stateful characterization of resistive switching TiO2 with electron beam induced currents

Brian D. Hoskins; Gina C. Adam; Evgheni Strelcov; Nikolai Zhitenev; Andrei Kolmakov; Dmitri B. Strukov; Jabez J. McClelland

doi:10.1038/s41467-017-02116-9

Nature Communications (Dec 2017)

Stateful characterization of resistive switching TiO2 with electron beam induced currents

Brian D. Hoskins,
Gina C. Adam,
Evgheni Strelcov,
Nikolai Zhitenev,
Andrei Kolmakov,
Dmitri B. Strukov,
Jabez J. McClelland

Affiliations

Brian D. Hoskins: Center for Nanoscale Science and Technology, National Institute of Standards and Technology
Gina C. Adam: Electrical and Computer Engineering Department, University of California Santa Barbara
Evgheni Strelcov: Center for Nanoscale Science and Technology, National Institute of Standards and Technology
Nikolai Zhitenev: Center for Nanoscale Science and Technology, National Institute of Standards and Technology
Andrei Kolmakov: Center for Nanoscale Science and Technology, National Institute of Standards and Technology
Dmitri B. Strukov: Electrical and Computer Engineering Department, University of California Santa Barbara
Jabez J. McClelland: Center for Nanoscale Science and Technology, National Institute of Standards and Technology

DOI: https://doi.org/10.1038/s41467-017-02116-9
Journal volume & issue: Vol. 8, no. 1
pp. 1 – 11

Abstract

Read online

Oxide-based memristors hold promise for artificial neuromorphic computing, yet the detail of the switching mechanism—filament formation—remains largely unknown. Hoskins et al. provide nanoscale imaging of this process using electron beam induced current microscopy and relate it to resistive states.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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