Deposition kinetics of in-situ oxygen doped polysilicon film

Abstract

The influence of deposition conditions on composition of in-situ oxygen doped polysilicon films has been investigated. A kinetic model of adsorption-deposition process using concentrated silane and nitrous oxide has been developed. The range of optimal ratios of silane and nitrous oxide flows and deposition temperature, which provide the acceptable deposition rate, thickness uniformity, controllability of oxygen content in films and conformal deposition, have been determined.

Keywords

• polysilicon
• adsorptive-kinetic model
• film deposition