Hysteresis modeling in ballistic carbon nanotube field-effect transistors

Abstract

Yian Liu,1 Mateus S Moura,2 Ademir J Costa,2,3 Luiz Alberto L de Almeida,4 Makarand Paranjape,1 Marcio Fontana21Department of Physics, Georgetown University, Washington, DC, USA; 2Department of Electrical Engineering, Federal University of Bahia, Salvador, Brazil; 3Federal Institute of Bahia, Santo Amaro, Brazil; 4Engineering, Modeling and Applied Social Sciences Center, Federal University of ABC, Santo André, BrazilAbstract: Theoretical models are adapted to describe the hysteresis effects seen in the electrical characteristics of carbon nanotube field-effect transistors. The ballistic transport model describes the contributions of conduction energy sub-bands over carbon nanotube field-effect transistor drain current as a function of drain-source and gate-source voltages as well as other physical parameters of the device. The limiting-loop proximity model, originally developed to understand magnetic hysteresis, is also utilized in this work. The curves obtained from our developed model corroborate well with the experimentally derived hysteretic behavior of the transistors. Modeling the hysteresis behavior will enable designers to reliably use these effects in both analog and memory applications.Keywords: ballistic transport, nanoscale device, solid-state device