The micro-LED roadmap: status quo and prospects

Chien-Chung Lin; Yuh-Renn Wu; Hao-Chung Kuo; Matthew S Wong; Steven P DenBaars; Shuji Nakamura; Ayush Pandey; Zetian Mi; Pengfei Tian; Kazuhiro Ohkawa; Daisuke Iida; Tao Wang; Yuefei Cai; Jie Bai; Zhiyong Yang; Yizhou Qian; Shin-Tson Wu; Jung Han; Chen Chen; Zhaojun Liu; Byung-Ryool Hyun; Jae-Hyun Kim; Bongkyun Jang; Hyeon-Don Kim; Hak-Joo Lee; Ying-Tsang Liu; Yu-Hung Lai; Yun-Li Li; Wanqing Meng; Haoliang Shen; Bin Liu; Xinran Wang; Kai-ling Liang; Cheng-Jhih Luo; Yen-Hsiang Fang

doi:10.1088/2515-7647/acf972

JPhys Photonics (Jan 2023)

The micro-LED roadmap: status quo and prospects

Chien-Chung Lin,
Yuh-Renn Wu,
Hao-Chung Kuo,
Matthew S Wong,
Steven P DenBaars,
Shuji Nakamura,
Ayush Pandey,
Zetian Mi,
Pengfei Tian,
Kazuhiro Ohkawa,
Daisuke Iida,
Tao Wang,
Yuefei Cai,
Jie Bai,
Zhiyong Yang,
Yizhou Qian,
Shin-Tson Wu,
Jung Han,
Chen Chen,
Zhaojun Liu,
Byung-Ryool Hyun,
Jae-Hyun Kim,
Bongkyun Jang,
Hyeon-Don Kim,
Hak-Joo Lee,
Ying-Tsang Liu,
Yu-Hung Lai,
Yun-Li Li,
Wanqing Meng,
Haoliang Shen,
Bin Liu,
Xinran Wang,
Kai-ling Liang,
Cheng-Jhih Luo,
Yen-Hsiang Fang

Affiliations

Chien-Chung Lin: ORCiD; Graduate Institute of Photonics and Optoelectronics, National Taiwan University , Taipei 10617, Taiwan
Yuh-Renn Wu: ORCiD; Graduate Institute of Photonics and Optoelectronics, National Taiwan University , Taipei 10617, Taiwan
Hao-Chung Kuo: Department of Photonics, National Yang Ming Chiao Tung University , Hsinchu 30010, Taiwan; Semiconductor Research Center, Hon-Hai Research Institute , Taipei, Taiwan
Matthew S Wong: ORCiD; Materials Department, University of California , Santa Barbara, CA 93106, United States of America
Steven P DenBaars: Materials Department, University of California , Santa Barbara, CA 93106, United States of America; Department of Electrical and Computer Engineering, University of California , Santa Barbara, CA 93106, United States of America
Shuji Nakamura: Materials Department, University of California , Santa Barbara, CA 93106, United States of America; Department of Electrical and Computer Engineering, University of California , Santa Barbara, CA 93106, United States of America
Ayush Pandey: ORCiD; Department of Electrical Engineering and Computer Science, University of Michigan , 1301 Beal Avenue, Ann Arbor, MI 48109, United States of America
Zetian Mi: ORCiD; Department of Electrical Engineering and Computer Science, University of Michigan , 1301 Beal Avenue, Ann Arbor, MI 48109, United States of America
Pengfei Tian: ORCiD; School of Information Science and Technology, Fudan University , Shanghai 200433, People’s Republic of China
Kazuhiro Ohkawa: ORCiD; King Abdullah University of Science and Technology, CEMSE Division, KAUST , Thuwal 23955-6900, Saudi Arabia
Daisuke Iida: ORCiD; King Abdullah University of Science and Technology, CEMSE Division, KAUST , Thuwal 23955-6900, Saudi Arabia
Tao Wang: ORCiD; Department of Electronic and Electrical Engineering, The University of Sheffield , Sheffield S1 3JD, United Kingdom
Yuefei Cai: Department of Electronic and Electrical Engineering, Southern University of Science and Technology , Shenzhen 518055, People’s Republic of China
Jie Bai: ORCiD; Department of Electronic and Electrical Engineering, The University of Sheffield , Sheffield S1 3JD, United Kingdom
Zhiyong Yang: College of Optics and Photonics, University of Central Florida , Orlando, FL 32816, United States of America
Yizhou Qian: ORCiD; College of Optics and Photonics, University of Central Florida , Orlando, FL 32816, United States of America
Shin-Tson Wu: ORCiD; College of Optics and Photonics, University of Central Florida , Orlando, FL 32816, United States of America
Jung Han: Department of Electrical Engineering, Yale University , 15 Prospect Street, New Haven, CT 06520, United States of America
Chen Chen: Saphlux Inc , Branford, CT 06405, United States of America
Zhaojun Liu: ORCiD; Department of Electrical and Electronic Engineering, Southern University of Science and Technology , Shenzhen, People’s Republic of China
Byung-Ryool Hyun: ORCiD; Department of Electrical and Electronic Engineering, Southern University of Science and Technology , Shenzhen, People’s Republic of China
Jae-Hyun Kim: ORCiD; KIMM, Korea Institute of Machinery and Materials , Daejeon 34103, Republic of Korea
Bongkyun Jang: KIMM, Korea Institute of Machinery and Materials , Daejeon 34103, Republic of Korea
Hyeon-Don Kim: KIMM, Korea Institute of Machinery and Materials , Daejeon 34103, Republic of Korea
Hak-Joo Lee: KIMM, Korea Institute of Machinery and Materials , Daejeon 34103, Republic of Korea; CAMM, Centre for Advanced Meta-Materials , Daejeon 34103, Republic of Korea
Ying-Tsang Liu: PlayNitride Inc , No. 13, Kezhong Road, Zhunan Township, Miaoli 350401, Taiwan
Yu-Hung Lai: PlayNitride Inc , No. 13, Kezhong Road, Zhunan Township, Miaoli 350401, Taiwan
Yun-Li Li: PlayNitride Inc , No. 13, Kezhong Road, Zhunan Township, Miaoli 350401, Taiwan
Wanqing Meng: ORCiD; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing, People’s Republic of China; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials , Nanjing, People’s Republic of China
Haoliang Shen: ORCiD; Suzhou Laboratory , Suzhou, People’s Republic of China
Bin Liu: ORCiD; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing, People’s Republic of China; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials , Nanjing, People’s Republic of China
Xinran Wang: ORCiD; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing, People’s Republic of China; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials , Nanjing, People’s Republic of China; Suzhou Laboratory , Suzhou, People’s Republic of China; School of Integrated Circuits, Nanjing University , Suzhou, People’s Republic of China
Kai-ling Liang: ORCiD; Industrial Technology Research Institute , Chutung, Hsinchu 310401, Taiwan
Cheng-Jhih Luo: Industrial Technology Research Institute , Chutung, Hsinchu 310401, Taiwan
Yen-Hsiang Fang: Industrial Technology Research Institute , Chutung, Hsinchu 310401, Taiwan

DOI: https://doi.org/10.1088/2515-7647/acf972
Journal volume & issue: Vol. 5, no. 4
p. 042502

Abstract

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Micro light-emitting diode (micro-LED) will play an important role in the future generation of smart displays. They are found very attractive in many applications, such as maskless lithography, biosensor, augmented reality (AR)/mixed reality etc, at the same time. A monitor that can fulfill saturated color rendering, high display resolution, and fast response time is highly desirable, and the micro-LED-based technology could be our best chance to meet these requirements. At present, semiconductor-based red, green and blue micro-LED chips and color-conversion enhanced micro-LEDs are the major contenders for full-color high-resolution displays. Both technologies need revolutionary ways to perfect the material qualities, fabricate the device, and assemble the individual parts into a system. In this roadmap, we will highlight the current status and challenges of micro-LED-related issues and discuss the possible advances in science and technology that can stand up to the challenges. The innovation in epitaxy, such as the tunnel junction, the direct epitaxy and nitride-based quantum wells for red and ultraviolet, can provide critical solutions to the micro-LED performance in various aspects. The quantum scale structure, like nanowires or nanorods, can be crucial for the scaling of the devices. Meanwhile, the color conversion method, which uses colloidal quantum dot as the active material, can provide a hassle-free way to assemble a large micro-LED array and emphasis the full-color demonstration via colloidal quantum dot. These quantum dots can be patterned by porous structure, inkjet, or photo-sensitive resin. In addition to the micro-LED devices, the peripheral components or technologies are equally important. Microchip transfer and repair, heterogeneous integration with the electronics, and the novel 2D material cannot be ignored, or the overall display module will be very power-consuming. The AR is one of the potential customers for micro-LED displays, and the user experience so far is limited due to the lack of a truly qualified display. Our analysis showed the micro-LED is on the way to addressing and solving the current problems, such as high loss optical coupling and narrow field of view. All these efforts are channeled to achieve an efficient display with all ideal qualities that meet our most stringent viewing requirements, and we expect it to become an indispensable part of our daily life.

Published in JPhys Photonics

ISSN: 2515-7647 (Online)
Publisher: IOP Publishing
Country of publisher: United Kingdom
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: https://iopscience.iop.org/journal/2515-7647

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