Influence of oxygen partial pressure on SmBa2Cu3O7-δ film deposited by laser chemical vapor deposition

Abstract

Laser chemical vapor deposition (LCVD) was applied to prepare SmBa2Cu3O7-δ (SmBCO) superconductive films on single-crystalline LaAlO3 (100) substrates. The effect of oxygen partial pressure (PO2) on the crystal orientation, microstructure, and superconducting property of SmBCO film were investigated thoroughly. The results of X-ray diffraction (XRD) and Raman showed that the crystal orientation of SmBCO film was pure c-axis orientation at the PO2 of 200 Pa, and the a-axis orientation grains gradually emerged in SmBCO film with the increase of PO2. The deposition rate, critical temperature (Tc), critical current density (Jc) firstly increased and then decreased with the increase of PO2. At the PO2 of 200 Pa, the SmBCO film had smooth and dense surface, the lowest FWHM of φ-scan (1.1°), the highest Tc (89.2 K) and Jc (2.04 MA/cm2), which indicated that SmBCO superconductive films possessed excellent crystal structure and superconducting performance.

Keywords

• smba2cu3o7-δ film
• laser chemical vapor deposition
• oxygen partial pressure
• superconducting property