Gas sensing response of ion beam irradiated Ga-doped ZnO thin films

Abstract

Abstract The ion beam induced modified gallium doped ZnO thin films are studied for their gas sensing applications. The Ag9+ and Si6+ irradiated gallium doped zinc oxide thin films were exposed to various concentrations of ethanol and acetone gas for gas sensing applications. The Ag9+ ion irradiated Ga-doped ZnO thin was optimized at different operating temperature. It was observed that gas sensing response for both ethanol and acetone gas increases with increasing Ag9+ ion fluence. This indicates that the swift heavy ions have improved the sensitivity of Ga-doled ZnO thin film by reducing the particle size. The Si6+ ion irradiated Ga-doped ZnO thin films were also exposed to ethanol and acetone gas for gas sensing applications. In comparison to Ag9+ ion irradiated thin film, the film irradiated with Si6+ ion beam exhibits a greater sensing response to both ethanol and acetone gas.