Influence of Thermal Treatment on The Electronic Properties of ITO Thin Films
Obtained by RF Cathodic Pulverization. Study of Solar Cells Based on Silicon/(RF Sputtered) ITO Junctions

G. Campet; C. Geoffroy; S. J. Wen; J. Portier; P. Keou; J. Salardenne; Z. W. Sun

doi:10.1155/1991/47924

Active and Passive Electronic Components (Jan 1991)

Influence of Thermal Treatment on The Electronic Properties of ITO Thin Films Obtained by RF Cathodic Pulverization. Study of Solar Cells Based on Silicon/(RF Sputtered) ITO Junctions

G. Campet,
C. Geoffroy,
S. J. Wen,
J. Portier,
P. Keou,
J. Salardenne,
Z. W. Sun

Affiliations

G. Campet: Laboratoire de Chimie du Solide du CNRS (LCS), Université de Bordeaux I, 351, cours de la Libération, Talence Cédex, 33405, France
C. Geoffroy: Laboratoire de Chimie du Solide du CNRS (LCS), Université de Bordeaux I, 351, cours de la Libération, Talence Cédex, 33405, France
S. J. Wen: Laboratoire de Chimie du Solide du CNRS (LCS), Université de Bordeaux I, 351, cours de la Libération, Talence Cédex, 33405, France
J. Portier: Laboratoire de Chimie du Solide du CNRS (LCS), Université de Bordeaux I, 351, cours de la Libération, Talence Cédex, 33405, France
P. Keou: Laboratoire d'Etude des Matériaux pour la Microélectronique (LEMME), Université de Bordeaux I, 351, cours de la Libération, Talence Cédex, 33405, France
J. Salardenne: Laboratoire d'Etude des Matériaux pour la Microélectronique (LEMME), Université de Bordeaux I, 351, cours de la Libération, Talence Cédex, 33405, France
Z. W. Sun: Ecole Polytechnique Fédérale de Lausanne, Institut de Physique Appliquée, PHB Ecublens, Lausanne CH-1015, Switzerland

DOI: https://doi.org/10.1155/1991/47924
Journal volume & issue: Vol. 14, no. 3
pp. 151 – 161

Abstract

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ITO (Indium Tin Oxide) thin films obtained by R.F cathodic sputtering have been studied. The influence of thermal treatment on the electronic properties of the films has been particularly investigated. Electrical measurements were performed between 95 and 600 K. Free carriers concentration in the film were measured by Hall effect coefficient. Optical indices were determined by computer drawing of charts allowing to simplify Manifacier method.

Published in Active and Passive Electronic Components

ISSN: 0882-7516 (Print); 1563-5031 (Online)
Publisher: Wiley
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://onlinelibrary.wiley.com/journal/5080

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