The Impact of the Micro-Structure within Passivated Layers on the Performance of the a-Si:H/c-Si Heterojunction Solar Cells
Sunhwa Lee,
Jinjoo Park,
Duy Phong Pham,
Sangho Kim,
Youngkuk Kim,
Thanh Thuy Trinh,
Vinh Ai Dao,
Junsin Yi
Affiliations
Sunhwa Lee
College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ru, Suwon-si 16419, Gyeonggi-do, Republic of Korea
Jinjoo Park
Major of Energy and Applied Chemistry, Division of Energy & Optical Technology Convergence, Cheongju University, Cheongju 28503, Chungcheongbuk-do, Republic of Korea
Duy Phong Pham
College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ru, Suwon-si 16419, Gyeonggi-do, Republic of Korea
Sangho Kim
Department of Energy Science, Sungkyunkwan University, 2066 Seobu-ru, Suwon-si 16419, Gyeonggi-do, Republic of Korea
Youngkuk Kim
College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ru, Suwon-si 16419, Gyeonggi-do, Republic of Korea
Thanh Thuy Trinh
Department of Physics, International University, Block 6, Linh Trung Ward, Thu Duc District, Ho Chi Minh City 720400, Vietnam
Vinh Ai Dao
Department of Physics, Faculty of Applied Sciences, Ho Chi Minh City University of Technology and Education, Ho Chi Minh City 700000, Vietnam
Junsin Yi
College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ru, Suwon-si 16419, Gyeonggi-do, Republic of Korea
This study investigated the correlation between the degree of disorder of the post-hydrogen plasma treatment (HPT) of the intrinsic hydrogenated amorphous silicon (a-Si:H(i)) and the device characteristics of the a-Si:H/c-Si heterojunction (HJ) solar cells. The reduction in the degree of disorder helps to improve interface defects and to enhance the effective carrier lifetime of the a-Si:H/c-Si heterojunction. The highest effective minority carrier lifetime of 2.08 ms was observed in the film with the lowest degree of disorder of 2.03. The devices constructed with HPT a-Si:H(i) having a lower degree of disorder demonstrated higher device performance in terms of open-circuit voltage (Voc), fill factor (FF), and subsequent conversion efficiency. An a-Si:H(i) with a lower degree of disorder (2.03) resulted in a higher Voc of 728 mV and FF of 72.33% and achieved a conversion efficiency of up to 20.84% for the a-Si:H/c-Si HJ silicon solar cell.
