Fast Response GaAs Photodetector Based on Constructing Electron Transmission Channel

Shuai Guo; Xue Chen; Dengkui Wang; Xuan Fang; Dan Fang; Jilong Tang; Lei Liao; Zhipeng Wei

doi:10.3390/cryst11101160

Crystals (Sep 2021)

Fast Response GaAs Photodetector Based on Constructing Electron Transmission Channel

Shuai Guo,
Xue Chen,
Dengkui Wang,
Xuan Fang,
Dan Fang,
Jilong Tang,
Lei Liao,
Zhipeng Wei

Affiliations

Shuai Guo: State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
Xue Chen: State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
Dengkui Wang: State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
Xuan Fang: State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
Dan Fang: State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
Jilong Tang: State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
Lei Liao: State Key Laboratory for Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha 410082, China
Zhipeng Wei: State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China

DOI: https://doi.org/10.3390/cryst11101160
Journal volume & issue: Vol. 11, no. 10
p. 1160

Abstract

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Low-dimensional GaAs photodetectors have drawn a great deal of attention because of their unique absorption properties and superior responsivity. However, their slow response speed caused by surface states presents challenges. In this paper, a mixed-dimensional GaAs photodetector is fabricated utilizing a single GaAs nanowire (NW) and a GaAs 2D non-layer sheet (2DNLS). The photodetector exhibits a fast response with a rise time of ~4.7 ms and decay time of ~6.1 ms. The high-speed performance is attributed to an electron transmission channel at the interface between the GaAs NW and GaAs 2DNLS. Furthermore, the fast electron channel is confirmed by eliminating interface states via wet passivation. This work puts forward an effective way to realize a high-speed photodetector by utilizing the surface states of low-dimensional materials.

Published in Crystals

ISSN: 2073-4352 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Crystallography
Website: http://www.mdpi.com/journal/crystals/

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