Degradation analysis of 1 MeV electron and 3 MeV proton irradiated InGaAs single junction solar cell
X. B. Shen,
A. Aierken,
M. Heini,
J. H. Mo,
Q. Q. Lei,
X. F. Zhao,
M. Sailai,
Y. Xu,
M. Tan,
Y. Y. Wu,
S. L. Lu,
Y. D. Li,
Q. Guo
Affiliations
X. B. Shen
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
A. Aierken
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
M. Heini
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
J. H. Mo
School of Energy and Environment, Yunnan Normal University, No. 756 Juxian Road, Chenggong District, Kunming 650500, People’s Republic of China
Q. Q. Lei
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
X. F. Zhao
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
M. Sailai
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
Y. Xu
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
M. Tan
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
Y. Y. Wu
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
S. L. Lu
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
Y. D. Li
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
Q. Guo
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
In this paper we reported the electrical and spectral properties of 1 MeV electron and 3 MeV proton irradiated In0.53Ga0.47As single junction solar cell, which is used as the fourth subcell of wafer bonded GaInP/GaAs//InGaAsP/InGaAs four-junction full spectra solar cell. The equivalent displacement damage dose model was applied to study the radiation effects of solar cell. The results show that the electrical parameters of the solar cell degrade seriously with the increase of irradiation fluences, the reduction of minority carrier life-time and changes of series and shunt resistance caused by irradiation-induced displacement damage are the main reason for the degradation of cell performance. Degradation of spectral response mainly occurred in the long wavelength region of solar cell due to the bigger displacement damage in the base layer of solar cell. Degradation properties of solar cell by electron and proton irradiation can be predicted by electron to proton damage equivalency factor Rep.
