Wide-band chalcogenide scintillators on the basis of AIIBVI compounds
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature. 2012;(4):25-28
Journal Title: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
ISSN: 2225-5818 (Print); 2309-9992 (Online)
Publisher: Politehperiodika
LCC Subject Category: Technology: Electrical engineering. Electronics. Nuclear engineering
Country of publisher: Ukraine
Language of fulltext: English, Russian
Full-text formats available: PDF
AUTHORS
Starzhinskiy N. G.
Grinyov B. V.
Ryzhikov V. D.
Maliykin Yu. V.
Zhukov A. V.
Sidletskiy O. Ts.
Zenya I. M.
Lalayants A. I.
EDITORIAL INFORMATION
Time From Submission to Publication: 4 weeks
Abstract | Full Text
The formation characteristics of chalcogenide scintillators (CS) based on zinc sulfide and selenide are considered. The research has shown that such scintillators have high specific light yield, low afterglow level, short luminescence time, low value of the effective atomic number (Zeff=26—33), large band gap (Eg=2,8—3,6 eV), high thermal stability of output parameters. The prospects of use of such scintillators in various devices of modern radiation instrumentation has been shown.