Wide-band chalcogenide scintillators on the basis of AIIBVI compounds

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature. 2012;(4):25-28

 

Journal Homepage

Journal Title: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature

ISSN: 2225-5818 (Print); 2309-9992 (Online)

Publisher: Politehperiodika

LCC Subject Category: Technology: Electrical engineering. Electronics. Nuclear engineering

Country of publisher: Ukraine

Language of fulltext: English, Russian

Full-text formats available: PDF

 

AUTHORS

Starzhinskiy N. G.
Grinyov B. V.
Ryzhikov V. D.
Maliykin Yu. V.
Zhukov A. V.
Sidletskiy O. Ts.
Zenya I. M.
Lalayants A. I.

EDITORIAL INFORMATION

Double blind peer review

Editorial Board

Instructions for authors

Time From Submission to Publication: 4 weeks

 

Abstract | Full Text

The formation characteristics of chalcogenide scintillators (CS) based on zinc sulfide and selenide are considered. The research has shown that such scintillators have high specific light yield, low afterglow level, short luminescence time, low value of the effective atomic number (Zeff=26—33), large band gap (Eg=2,8—3,6 eV), high thermal stability of output parameters. The prospects of use of such scintillators in various devices of modern radiation instrumentation has been shown.