Performance analysis of a novel trench SOI LDMOS with centrosymmetric double vertical field plates

Jianmei Lei; Shengdong Hu; Dong Yang; Ye Huang; Lidong Chen; Jingwei Guo; Chang Liu; Tao Liu; Yuan Wang

Results in Physics (Mar 2019)

Performance analysis of a novel trench SOI LDMOS with centrosymmetric double vertical field plates

Jianmei Lei,
Shengdong Hu,
Dong Yang,
Ye Huang,
Lidong Chen,
Jingwei Guo,
Chang Liu,
Tao Liu,
Yuan Wang

Affiliations

Jianmei Lei: State Key Laboratory of Vehicle NVH and Safety Technology, China Automotive Engineering Research Institute Co. Ltd., Chongqing 401122, China
Shengdong Hu: Key Laboratory of Dependable Service Computing in Cyber Physical Society, Ministry of Education, and Chongqing Engineering Laboratory of High Performance Integrated Circuits, College of Communication Engineering, Chongqing University, Chongqing 400044, China; Corresponding author.
Dong Yang: Key Laboratory of Dependable Service Computing in Cyber Physical Society, Ministry of Education, and Chongqing Engineering Laboratory of High Performance Integrated Circuits, College of Communication Engineering, Chongqing University, Chongqing 400044, China
Ye Huang: Key Laboratory of Dependable Service Computing in Cyber Physical Society, Ministry of Education, and Chongqing Engineering Laboratory of High Performance Integrated Circuits, College of Communication Engineering, Chongqing University, Chongqing 400044, China
Lidong Chen: State Key Laboratory of Vehicle NVH and Safety Technology, China Automotive Engineering Research Institute Co. Ltd., Chongqing 401122, China
Jingwei Guo: Key Laboratory of Dependable Service Computing in Cyber Physical Society, Ministry of Education, and Chongqing Engineering Laboratory of High Performance Integrated Circuits, College of Communication Engineering, Chongqing University, Chongqing 400044, China
Chang Liu: Key Laboratory of Dependable Service Computing in Cyber Physical Society, Ministry of Education, and Chongqing Engineering Laboratory of High Performance Integrated Circuits, College of Communication Engineering, Chongqing University, Chongqing 400044, China
Tao Liu: Key Laboratory of Dependable Service Computing in Cyber Physical Society, Ministry of Education, and Chongqing Engineering Laboratory of High Performance Integrated Circuits, College of Communication Engineering, Chongqing University, Chongqing 400044, China
Yuan Wang: Key Laboratory of Dependable Service Computing in Cyber Physical Society, Ministry of Education, and Chongqing Engineering Laboratory of High Performance Integrated Circuits, College of Communication Engineering, Chongqing University, Chongqing 400044, China

Journal volume & issue: Vol. 12
pp. 810 – 815

Abstract

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A novel trench SOI LDMOS with centrosymmetric double vertical field plates structure (CDVFPT SOI LDMOS) is proposed in this paper. The 2-D device simulator MEDICI is used to investigate the characteristics of the proposed structure. Compared with the conventional trench SOI LDMOS (CT SOI LDMOS), the optimized device shows an obvious reduction in the specific on-resistance (Ron,sp) when its breakdown voltage (BV) is enhanced due to the introduction of centrosymmetric double vertical field plates structure. And when compared to previous device with floating vertical field plate trench SOI LDMOS (FVFPT SOI LDMOS), the overall performance of CDVFPT SOI LDMOS is also promoted. According to the simulation results, compared to a CT SOI LDMOS, the BV of CDVFPT SOI LDMOS increases from 188 V to 234 V. The Ron,sp, however, decreases from 2.30 mΩ·cm2 to 1.24 mΩ·cm2. In addition, the maximum lattice temperature at 1 mW/μm2 is slightly reduced. Keywords: Power MOSFET, Vertical field plate, Breakdown voltage, Specific on-resistance

Published in Results in Physics

ISSN: 2211-3797 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Science: Physics
Website: http://www.journals.elsevier.com/results-in-physics/

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