Optical and electrical properties of proton-implanted p-GaSb for electrical isolation

Abstract

The effect of proton implantation as isolation implant and subsequent annealing on the optical absorption and electrical resistivity of low-bandgap p -GaSb is reported. The measured transmittance spectra indicates that implantation creates a distribution of energy levels extending into the bandgap. Electrical measurements show that the average sheet resistance of the implanted layer increases only by an order of magnitude from its pre-implantation value at a proton dose of ∼10 ^13 cm ^−2 followed by 200 °C annealing. It is also shown that annealing reduces the implantation-induced optical absorption while still retaining a high electrical resistivity.

Keywords

• ion implantation
• implant isolation
• rapid thermal annealing
• gallium antimonide
• spectroscopy