Materials (Aug 2020)

Low-Temperature In-Induced Holes Formation in Native-SiO<sub>x</sub>/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires

  • Rodion R. Reznik,
  • Konstantin P. Kotlyar,
  • Vladislav O. Gridchin,
  • Evgeniy V. Ubyivovk,
  • Vladimir V. Federov,
  • Artem I. Khrebtov,
  • Dmitrii S. Shevchuk,
  • George E. Cirlin

DOI
https://doi.org/10.3390/ma13163449
Journal volume & issue
Vol. 13, no. 16
p. 3449

Abstract

Read online

The reduction of substrate temperature is important in view of the integration of III–V materials with a Si platform. Here, we show the way to significantly decrease substrate temperature by introducing a procedure to create nanoscale holes in the native-SiOx layer on Si(111) substrate via In-induced drilling. Using the fabricated template, we successfully grew self-catalyzed GaAs nanowires by molecular-beam epitaxy. Energy-dispersive X-ray analysis reveals no indium atoms inside the nanowires. This unambiguously manifests that the procedure proposed can be used for the growth of ultra-pure GaAs nanowires.

Keywords