Nature Communications (Apr 2022)
Bridging the gap between atomically thin semiconductors and metal leads
- Xiangbin Cai,
- Zefei Wu,
- Xu Han,
- Yong Chen,
- Shuigang Xu,
- Jiangxiazi Lin,
- Tianyi Han,
- Pingge He,
- Xuemeng Feng,
- Liheng An,
- Run Shi,
- Jingwei Wang,
- Zhehan Ying,
- Yuan Cai,
- Mengyuan Hua,
- Junwei Liu,
- Ding Pan,
- Chun Cheng,
- Ning Wang
Affiliations
- Xiangbin Cai
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
- Zefei Wu
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
- Xu Han
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
- Yong Chen
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
- Shuigang Xu
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
- Jiangxiazi Lin
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
- Tianyi Han
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
- Pingge He
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
- Xuemeng Feng
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
- Liheng An
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
- Run Shi
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
- Jingwei Wang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
- Zhehan Ying
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
- Yuan Cai
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
- Mengyuan Hua
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology
- Junwei Liu
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
- Ding Pan
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
- Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology
- Ning Wang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
- DOI
- https://doi.org/10.1038/s41467-022-29449-4
- Journal volume & issue
-
Vol. 13,
no. 1
pp. 1 – 9
Abstract
Barrier-free metal-semiconductor interfaces are crucial to improve the performance of 2D electronic devices. Here, the authors report a strategy to induce local bonding distortion in 2D transition metal dichalcogenides via soft oxygen plasma treatments, leading to reduced contact resistance and improved transport properties.
