Nanoscale Research Letters (Jan 2011)

Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells

  • Tian Haitao,
  • Ye Huiqi,
  • Wang Gang,
  • Wang Wenxin,
  • Liu Baoli,
  • Marie Xavier,
  • Hu Changcheng,
  • Wang Wenquan

Journal volume & issue
Vol. 6, no. 1
p. 149

Abstract

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Abstract Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient D s.