Nanomaterials (Jun 2022)

Structural and Electrical Properties of Annealed Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Films Grown on Flexible Polyimide

  • Marco Bertelli,
  • Adriano Díaz Fattorini,
  • Sara De Simone,
  • Sabrina Calvi,
  • Riccardo Plebani,
  • Valentina Mussi,
  • Fabrizio Arciprete,
  • Raffaella Calarco,
  • Massimo Longo

DOI
https://doi.org/10.3390/nano12122001
Journal volume & issue
Vol. 12, no. 12
p. 2001

Abstract

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The morphological, structural, and electrical properties of as-grown and annealed Ge2Sb2Te5 (GST) layers, deposited by RF-sputtering on flexible polyimide, were studied by means of optical microscopy, atomic force microscopy, X-ray diffraction, Raman spectroscopy, and electrical characterization. The X-ray diffraction annealing experiments showed the structural transformation of GST layers from the as-grown amorphous state into their crystalline cubic and trigonal phases. The onset of crystallization of the GST films was inferred at about 140 °C. The vibrational properties of the crystalline GST layers were investigated via Raman spectroscopy with mode assignment in agreement with previous works on GST films grown on rigid substrates. The electrical characterization revealed a good homogeneity of the amorphous and crystalline trigonal GST with an electrical resistance contrast of 8 × 106.

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