Nanomaterials (Jul 2020)

Comparative Chemico-Physical Analyses of Strain-Free GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As Quantum Dots Grown by Droplet Epitaxy

  • Inah Yeo,
  • Doukyun Kim,
  • Kyu-Tae Lee,
  • Jong Su Kim,
  • Jin Dong Song,
  • Chul-Hong Park,
  • Il Ki Han

DOI
https://doi.org/10.3390/nano10071301
Journal volume & issue
Vol. 10, no. 7
p. 1301

Abstract

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We investigate the quantum confinement effects on excitons in several types of strain-free GaAs/Al 0.3 Ga 0.7 As droplet epitaxy (DE) quantum dots (QDs). By performing comparative analyses of energy-dispersive X-ray spectroscopy with the aid of a three-dimensional (3D) envelope-function model, we elucidate the individual quantum confinement characteristics of the QD band structures with respect to their composition profiles and the asymmetries of their geometrical shapes. By precisely controlling the exciton oscillator strength in strain-free QDs, we envisage the possibility of tailoring light-matter interactions to implement fully integrated quantum photonics based on QD single-photon sources (SPSs).

Keywords