Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure

Abstract

Abstract In this study, we demonstrate binary and ternary logic-in-memory (LIM) operations of inverters and NAND and NOR gates comprising nanosheet (NS) feedback field-effect transistors (FBFETs) with a triple-gated structure. The NS FBFETs are reconfigured in p- or n-channel modes depending on the polarity of the gate bias voltage and exhibit steep switching characteristics with an extremely low subthreshold swing of 1.08 mV dec–1 and a high ON/OFF current ratio of approximately 107. Logic circuits consisting of NS FBFETs perform binary and ternary logic operations of the inverters and NAND and NOR gates in each circuit and store their outputs under zero-bias conditions. Therefore, NS FBFETs are promising components for next-generation LIM.