Advances in Electrical and Electronic Engineering (Jan 2008)

Simulation of Electrical Parameters for Ru/Ta2O5/SiO2/Si(p) High-k MOS Structure

  • Juraj Racko,
  • Ladislav Harmatha,
  • Juraj Breza,
  • Peter Benko,
  • Daniel Donoval

Journal volume & issue
Vol. 7, no. 1 - 2
pp. 385 – 388

Abstract

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The contribution presents the results of simulation of direct tunnelling of free charge carriers through a thin gateinsulator in MOS structures consisting of a Ta2O5/SiO2 bilayer taking into account also indirect tunnelling of free chargecarriers through the SiO2/Si interface traps. The calculated I–V and C–V curves reveal the processes of electron and holetunnelling through the insulator-to-semiconductor potential barrier that can be divided into four classes.

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