Enhanced TC in SrRuO3/DyScO3(110) thin films with high residual resistivity ratio

Nathaniel J. Schreiber; Ludi Miao; Hari P. Nair; Jacob P. Ruf; Lopa Bhatt; Yorick A. Birkholzer; George N. Kotsonis; Lena F. Kourkoutis; Kyle M. Shen; Darrell G. Schlom

doi:10.1063/5.0156344

APL Materials (Nov 2023)

Enhanced TC in SrRuO3/DyScO3(110) thin films with high residual resistivity ratio

Nathaniel J. Schreiber,
Ludi Miao,
Hari P. Nair,
Jacob P. Ruf,
Lopa Bhatt,
Yorick A. Birkholzer,
George N. Kotsonis,
Lena F. Kourkoutis,
Kyle M. Shen,
Darrell G. Schlom

Affiliations

Nathaniel J. Schreiber: Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Ludi Miao: Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
Hari P. Nair: Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Jacob P. Ruf: Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
Lopa Bhatt: School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
Yorick A. Birkholzer: Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
George N. Kotsonis: Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Lena F. Kourkoutis: School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
Kyle M. Shen: Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
Darrell G. Schlom: Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA

DOI: https://doi.org/10.1063/5.0156344
Journal volume & issue: Vol. 11, no. 11
pp. 111101 – 111101-7

Abstract

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Epitaxial untwinned SrRuO3 thin films were grown on (110)-oriented DyScO3 substrates by molecular-beam epitaxy. We report an exceptional sample with a residual resistivity ratio (RRR), ρ [300 K]/ρ [4 K] of 205 and a ferromagnetic Curie temperature, TC, of 168.3 K. We compare the properties of this sample to other SrRuO3 films grown on DyScO3(110) with RRRs ranging from 8.8 to 205, and also compare it to the best reported bulk single crystal of SrRuO3. We determine that SrRuO3 thin films grown on DyScO3(110) have an enhanced TC as long as the RRR of the thin film is above a minimum electrical quality threshold. This RRR threshold is about 20 for SrRuO3. Films with lower RRR exhibit TCs that are significantly depressed from the intrinsic strain-enhanced value.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

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