Nature Communications (Dec 2017)
Electric-field control of ferromagnetism through oxygen ion gating
- Hao-Bo Li,
- Nianpeng Lu,
- Qinghua Zhang,
- Yujia Wang,
- Deqiang Feng,
- Tianzhe Chen,
- Shuzhen Yang,
- Zheng Duan,
- Zhuolu Li,
- Yujun Shi,
- Weichao Wang,
- Wei-Hua Wang,
- Kui Jin,
- Hui Liu,
- Jing Ma,
- Lin Gu,
- Cewen Nan,
- Pu Yu
Affiliations
- Hao-Bo Li
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University
- Nianpeng Lu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University
- Qinghua Zhang
- Institute of Physics, Chinese Academy of Science
- Yujia Wang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University
- Deqiang Feng
- Department of Electronic Science and Engineering, Nankai University
- Tianzhe Chen
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University
- Shuzhen Yang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University
- Zheng Duan
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University
- Zhuolu Li
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University
- Yujun Shi
- Institute of Physics, Chinese Academy of Science
- Weichao Wang
- Department of Electronic Science and Engineering, Nankai University
- Wei-Hua Wang
- Department of Electronic Science and Engineering, Nankai University
- Kui Jin
- Institute of Physics, Chinese Academy of Science
- Hui Liu
- Department of Electronic Science and Engineering, Nankai University
- Jing Ma
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University
- Lin Gu
- Institute of Physics, Chinese Academy of Science
- Cewen Nan
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University
- Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University
- DOI
- https://doi.org/10.1038/s41467-017-02359-6
- Journal volume & issue
-
Vol. 8,
no. 1
pp. 1 – 7
Abstract
It has been suggested that the magnetic properties of metal layers using reversible redox reactions could form the basis of memory devices but this requires fast electric control to be practical. Here the authors demonstrate this on sub-millisecond timescales in a metal–oxide heterostructure.
