Nature Communications (Aug 2022)
Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length
Abstract
Edge-to-edge metal-semiconductor junctions have the potential to improve the performance of 2D transistors. Here, the authors report a synthetic strategy to fabricate monolayer MoS2-PtTe2 heterojunction arrays with sub-1-nm transfer length and enhanced carrier injection compared to vertical 3D metallic contacts.