P3HT vs Spiro-OMeTAD as a hole transport layer for halide perovskite indoor photovoltaics and self-powering of motion sensors

Abstract

Recent years have witnessed the emergence of indoor photovoltaic (PV) devices with the rapid development of the Internet of things technology field. Among the candidates for indoor PVs, halide perovskites are attracting enormous attention due to their outstanding optoelectronic properties suitable for indoor light harvesting. Here we investigated the indoor PV properties of CH _3 NH _3 PbI _3 -based devices using Spiro-OMeTAD and P3HT as the hole transport layers. The Spiro-OMeTAD-based devices show a consistently higher power conversion efficiency under indoor illumination and 1 sun, with the champion devices showing a power conversion efficiency of 21.0% and 30.1% for the forward and reverse scan under 1000 lux warm white LED illumination. Fewer trap states and higher carrier lifetime were revealed for Spiro-OMeTAD based devices compared to P3HT. The best-performed Spiro-OMeTAD-based devices are used to self-power a wearable motion sensor, which could detect human motion in real-time, to create a primary sensor system with independent power management. By attaching the Spiro-OMeTAD indoor PV device to the strain sensor, the sensor exhibits an accurate and sensitive response with finger bending movements with good repeatability and negligible degradation of mechanical stability, which indicates the success of sensor powering with the indoor PV device.

Keywords

• P3HT
• hole transport layer
• stability
• halide perovskite