Electrical and topological properties of oxides films grown thermally on InSe substrates

Abstract

The surface resistance dynamics of oxides grown thermally on InSe substrates in two crystallography planes is obtained. It is determined that resistance changes considerably only during the first 5 minutes of the oxidization period. The increase of an oxidization duration does not influence on its value, but it results in transformation of surface topology. The images of atomic-power microscopy visualize the surface nanostructurization of oxide in the form of nanoneedles. Their lateral and vertical parameters as well as their density are caused by temperature-time factors.

Keywords

• InSe
• thermal oxidation
• surface resistance
• atomic-force microscopy
• surface topology