A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE

Abstract

A quantum well optoelectronic switch (QWOES) based on regenerative loop of potential barrier lowering resulted from the forward biased pn junction is demonstrated in a AlGaAs/GaAs/InGaAs double heterostructure. Excellent electrical switching characteristics with a high voltage control efficiency η(= VS/VH) of 6.8 have been obtained when the device is operated in the dark. Typical OFF-and ON-state resistances are 120 kΩ, 25 Ω, respectively. A lasing threshold current density, front slope efficiency and external differential quantum efficiency measured in as-cleaved device are 210 A/cm, 0.4mW/mA and 31.4%, respectively. The peak emission wavelength is centered at about 974 nm.